Fig. 3
From: Influence of electron distribution on efficiency droop for GaN-based light emitting diodes
a The current density-voltage characteristics for these samples and b the electroluminescence spectra measured at 13.8 A/cm2 and room temperature for GaN-based LEDs with different quantum barriers: LED I is In0.13Ga0.87N/GaN–based LED, LED II is In0.14Ga0.86N/In0.03Ga0.97N–based LED and LED III is In0.13Ga0.87N/In0.07Ga0.93N-based LED. The inset shows the peak wavelength energy as a function of the current density