The model of the LED assembly consists of a blue emitting LED die with a CCE in globe-top configuration surrounding the die. The irradiance distributions for both the blue LED light and the yellow converted light are monitored by a detector, which has a hemispherical shape and is centrically placed above the LED package. The die’s active area (940 μm × 940 μm) is located on top of a silicon substrate which has lateral dimensions of 990 μm × 990 μm and a height of 100 μm. The silicon substrate is mounted on a printed circuit board by chip-on-board technology. The CCEs are assumed to have a globe-top configuration with a hemispherical shape and radii which vary from 1 mm to 2 mm and 3 mm. The phosphor concentrations for these three different globe-top sizes are adjusted in order to get similar overall CIE x values of about 0.3300 and 0.3800 in each case, under the assumption that the substrate surface has a diffuse reflectivity of 85%.